| PART |
Description |
Maker |
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N90R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| ARA2005 ARA2005S8P0 ARA2005S8P1 |
The ARA2005 is a monolithic GaAs device designed to provide the reverse path amplification and output level control functions in ...
Reverse Path Amplifiers
Reverse Amplifier with Step Attenuator
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| IKW15T120 IKW15T12008 |
TrenchStop Series
|
http://
Infineon Technologies AG
|
| IGW40N65H5 PG-TO220-3 PG-TO247-3 |
High speed 5 IGBT in TRENCHSTOP 5 technology
|
Infineon Technologies AG
|
| IGW40T120 IGW40T12009 |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies AG
|
| IGW25T12009 |
Low Loss IGBT in TrenchStop? and Fieldstop technology
|
Infineon Technologies AG
|
| IGB30N60T |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies A...
|
